650 V, 8 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF • Power efficient product • ECOPACK®2 comp

文件：364.86 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 8A D2PAK

STMICROELECTRONICS

意法半导体

Automotive 650 V, 8 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No reverse recovery charge in application current range • Switching behavior independent of temperature • Recommended to PFC applications • PPAP capable • VRRM guaranteed from -40 to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with

文件：611.66 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

latch circuit

文件：64.349 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

650 V power Schottky silicon carbide diode

文件：228.32 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

650 V, 8 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF • Power efficient product • ECOPACK®2 comp

文件：364.86 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体