RT8H065C数据表ic资料贸易商谏早电子-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
RT8H065C	文件：64.349 Kbytes Page：4 Pages	latch circuit 文件：64.349 Kbytes 页数：4 Pages	ISAHAYA 谏早电子	ISAHAYA
RT8H065C	文件：300 bytes Page：1 Pages	latch circuit	IDC	IDC
STPSC8H065	文件：228.32 Kbytes Page：14 Pages	650 V power Schottky silicon carbide diode 文件：228.32 Kbytes 页数：14 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STPSC8H065	文件：364.86 Kbytes Page：16 Pages	650 V, 8 A high surge silicon carbide power Schottky diode Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF • Power efficient product • ECOPACK®2 comp 文件：364.86 Kbytes 页数：16 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STPSC8H065B-TR	文件：364.86 Kbytes Page：16 Pages	650 V, 8 A high surge silicon carbide power Schottky diode Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF • Power efficient product • ECOPACK®2 comp 文件：364.86 Kbytes 页数：16 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多RT8H065C供应商更新时间2026-4-17 10:19:00