Automotive 650 V, 8 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No reverse recovery charge in application current range • Switching behavior independent of temperature • Recommended to PFC applications • PPAP capable • VRRM guaranteed from -40 to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with

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汽车用650 V、8 A高浪涌碳化硅功率肖特基二极管

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patter • AEC-Q101 qualified \n• No reverse recovery charge in application current range \n• Switching behavior independent of temperature \n• Recommended to PFC applications \n• PPAP capable \n• VRRM guaranteed from -40 to 175 °C \n• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top co;

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latch circuit

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ISAHAYA

谏早电子

650 V power Schottky silicon carbide diode

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650 V, 8 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF • Power efficient product • ECOPACK®2 comp

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