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STPSC8H065-Y数据手册ST中文资料规格书
STPSC8H065-Y规格书详情
描述 Description
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC8H065-Y SiC diode will boost performance in hard switching conditions.
特性 Features
• AEC-Q101 qualified
• No reverse recovery charge in application current range
• Switching behavior independent of temperature
• Recommended to PFC applications
• PPAP capable
• VRRM guaranteed from -40 to 175 °C
• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating)
• ECOPACK®2 compliant component
技术参数
- 制造商编号
：STPSC8H065-Y
- 生产厂家
：ST
- Number of Diodes_spec
：1
- Marketing Status
：Active
- Repetitive Peak Reverse Voltage_max(V)
：650
- Average Rectified Current_max(A)
：8
- VF_max(V)
：1.65
- VF measure condition_spec(@ IF)(A)
：8
- Reverse Current_max(mA)
：0.08
- Total capacitive charge(nC)
：23.5
- Non-Repet Peak Forward Surge Current_max(A)
：75
- Junction Temperature_max(°C)
：175
- General Description
：Automotive 650 V
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ST/意法半导体 |
2511 |
TO-220-3 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ST/意法半导体 |
23+ |
TO-220-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法半导体 |
23+ |
TO-220-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST/意法半导体 |
24+ |
TO-220-3 |
10000 |
十年沉淀唯有原装 |
询价 | ||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
22+ |
TO-220-3 |
10000 |
只有原装,原装,假一罚十 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 |
