STPSC6H065DLF数据手册分立半导体产品的二极管-整流器-单规格书PDF

描述 Description

This 6 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Qualified in low profile package, the STPSC6H065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains.

特性 Features

• Less than 1 mm height package
• High creepage package
• No or negligible reverse recovery
• Temperature independent switching behavior
• High forward surge capability
• Low drop forward voltage
• Power efficient product
• ECOPACK2 compliant component

简介

STPSC6H065DLF属于分立半导体产品的二极管-整流器-单。由制造生产的STPSC6H065DLF二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。