STPSC30G12-Y中文资料Automotive 1200 V, 30 A Silicon Carbide Diode数据手册ST规格书

描述 Description

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.

特性 Features

• AEC-Q101 qualified and PPAP capable
• None or negligible reverse recovery
• Switching behavior independent of temperature
• Robust high voltage periphery
• Operating Tj from -55 °C to 175 °C
• Avalanche energy rated
• ECOPACK2 compliant component