N沟道600 V、4 Ohm典型值、0.6 A MDmesh K3功率MOSFET，TO-92封装

This MDmesh™ K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the • 100% avalanche tested \n• Extremely high dv/dt capability \n• Very low intrinsic capacitance \n• Improved diode reverse recovery characteristics \n• Zener-protected;

ST

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丝印：2LN60K3；Package：TO-92；N-channel 600 V, 4 廓 typ., 0.6 A MDmesh??K3 Power MOSFET in a TO-92 package

文件：613.1 Kbytes 页数：13 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=8A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.93 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650V (D-S) Power MOSFET

文件：980.48 Kbytes 页数：9 Pages

VBSEMI

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N-channel 600 V, 4typ., 2 A SuperMESH3 Power MOSFET in DPAK, TO-220FP and IPAK packages

文件：1.0714 Mbytes 页数：20 Pages

STMICROELECTRONICS

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