isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=8A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.93 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 4typ., 2 A SuperMESH3 Power MOSFET in DPAK, TO-220FP and IPAK packages

文件：1.0714 Mbytes 页数：20 Pages

STMICROELECTRONICS

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N-Channel 650V (D-S) Power MOSFET

文件：980.48 Kbytes 页数：9 Pages

VBSEMI

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N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in IPAK package

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitab • 100% avalanche tested\n• Extremely high dv/dt capability\n• Very low intrinsic capacitance• Improved diode reverse recovery characteristics\n• Zener-protected;

ST

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