isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.75Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：359.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET

文件：409.25 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

丝印：W10NK60Z；Package：TO-247；N-channel 600V - 0.65廓 - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH??Power MOSFET

文件：492.83 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V、0.65 Ohm典型值、10 A有齐纳管保护的SuperMESH功率MOSFET，TO-247封装

These devices are N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high • Extremely high dv/dt capability \n• 100% avalanche tested \n• Gate charge minimized \n• Zener-protected;

ST

意法半导体