isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.8A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

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STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件：977.19 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N沟道620 V、1.7 Ohm典型值、3.8 A SuperMESH3(TM) 功率MOSFET，IPAK封装

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitab • 100% avalanche tested \n• Extremely high dv/dt capability \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Improved diode reverse recovery characteristics \n• Zener-protected;

ST

意法半导体