N沟道950 V、1 Ohm典型值、9 A有齐纳管保护的SuperMESH(TM) 5功率MOSFET，IPAK封装

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

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意法半导体

N-channel 950 V, 1 廓 typ., 9 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK

文件：1.22735 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

N-Channel Power MOSFET

DESCRIPTION ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 950V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.25Ω(Max)@VGS= 10V APPLICATIONS ·DC-DC converter ·Battery Chargers ·High speed power switch

文件：344.73 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 950 V, 1 廓 typ., 9 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK

文件：1.22735 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

N-channel 950 V, 1 廓 typ., 9 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK

文件：1.22735 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体