isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) =5.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-channel 30 V, 0.0042 廓 , 80 A, DPAK, TO-220, IPAK STripFET??V Power MOSFET

Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFETTM technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. F

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STMICROELECTRONICS

意法半导体

N-channel 30 V, 0.0042 廓 , 80 A, DPAK, TO-220, IPAK STripFET??V Power MOSFET

文件：817.56 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-Channel 30-V (D-S) MOSFET

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VBSEMI

微碧半导体

N-channel 30 V, 0.0042 Ohm , 80 A, DPAK, TO-220, IPAK

This product utilizes the 5th generation of design rules of ST’s proprietary STripFETTMtechnology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.\n • RDS(on)* Qgindustry benchmark\n• Extremely low on-resistance RDS(on)• High avalanche ruggedness\n• Low gate drive power losses;

ST

意法半导体