丝印：7N65M2；Package：IPAK；N-channel 650 V, 0.98 廓 typ., 5 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most dem

文件：881.75 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N沟道650 V、0.98 Ohm典型值、5 A MDmesh M2功率MOSFET，IPAK封装

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high eff • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

ST

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N-Channel MOSFET uses advanced trench technology

文件：2.091489 Mbytes 页数：7 Pages

DOINGTER

杜因特

Extremely low gate charge

Description This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demand

文件：1.06499 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

Description This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demand

文件：904.79 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体