600 V power Schottky silicon carbide diode

Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ri

文件：108.2 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Package：TO-220-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 600V 4A TO220AC

STMICROELECTRONICS

意法半导体

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all freewheel mode operations and is particularly suitable and efficient in motor co

文件：53.74 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all freewheel mode operations and is particularly suitable and efficient in motor co

文件：53.74 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

Einteilige Universalarmatur gerade, metrisch One-piece Universal Connection straight, metric

文件：122.26 Kbytes 页数：2 Pages

ABB

ABB集团