1200 V, 40 A power Schottky high surge silicon carbide diode

Features • None or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating Tj from -55 °C to 175 °C • Avalanche energy rated • ECOPACK2 compliant component

文件：490.93 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode

Features • AEC-Q101 qualified and PPAP capable • None or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating Tj from -55 °C to 175 °C • Avalanche energy rated • ECOPACK2 compliant component

文件：492.54 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode

Features • AEC-Q101 qualified and PPAP capable • None or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating Tj from -55 °C to 175 °C • Avalanche energy rated • ECOPACK2 compliant component

文件：492.54 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Thyristor-Diode Modules

文件：226.19 Kbytes 页数：2 Pages

SIRECTIFIER

矽莱克电子

1200 V, 40 A power Schottky high surge silicon carbide diode

Features • None or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating Tj from -55 °C to 175 °C • Avalanche energy rated • ECOPACK2 compliant component

文件：490.93 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体