650 V, 4 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF • Power efficient product • ECOPACK®2 comp

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Universal Regulated Quick Connect Power Supply

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650 V power Schottky silicon carbide diode

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丝印：STPSC4H065；Package：DPAK；650 V, 4 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF • Power efficient product • ECOPACK®2 comp

文件：322.28 Kbytes 页数：14 Pages

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丝印：STPSC4H065；Package：DPAK；650 V power Schottky silicon carbide diode

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650 V、4 A高浪涌碳化硅功率肖特基二极管

碳化硅（SiC）二极管是一款超高性能的功率肖特基二极管，是使用碳化硅基板制造的。宽带隙材料可用于设计650V额定电压的肖特基二极管。由于肖特基结构的关系，关断时不存在反向恢复现象，且振铃模式几乎可忽略。最小的容性关断行为受温度影响小。\n\n ST碳化硅（SiC）二极管特别适用于PFC应用，可在硬开关条件下大幅提升效能。其高耐正向浪涌电流能力可确保在瞬态期间提供良好的耐受性。 • 在应用电流范围内无反向恢复 \n• 开关行为受温度影响小 \n• 高耐正向浪涌电流能力 \n• 绝缘封装TO-220AC插件： \n •Insulated voltage: 2500 V rms \n •Typical package capacitance: 7 pF;

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丝印：STPSC4H065D；Package：TO-220AC；650 V, 4 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF • Power efficient product • ECOPACK®2 comp

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650 V power Schottky silicon carbide diode

Features • Less than 1 mm height package • High creepage package • No or negligible reverse recovery • Temperature independent switching behavior • High forward surge capability • Low drop forward voltage • Power efficient product • ECOPACK2 compliant component Description This 4 A, 65

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丝印：STPSC4H065D；Package：TO-220AC；650 V power Schottky silicon carbide diode

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4 A、650 V碳化硅功率肖特基二极管

This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and r • Less than 1 mm height package \n• High creepage package \n• No or negligible reverse recovery \n• Temperature independent switching behavior \n• High forward surge capability \n• Low drop forward voltage \n• Power efficient product \n• ECOPACK2 compliant component;

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