4 A、650 V碳化硅功率肖特基二极管

This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and r • Less than 1 mm height package \n• High creepage package \n• No or negligible reverse recovery \n• Temperature independent switching behavior \n• High forward surge capability \n• Low drop forward voltage \n• Power efficient product \n• ECOPACK2 compliant component;

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650 V power Schottky silicon carbide diode

Features • Less than 1 mm height package • High creepage package • No or negligible reverse recovery • Temperature independent switching behavior • High forward surge capability • Low drop forward voltage • Power efficient product • ECOPACK2 compliant component Description This 4 A, 65

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STMICROELECTRONICS

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Package：8-PowerVDFN；包装：管件管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SILICON CARBIDE DIODES

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Universal Regulated Quick Connect Power Supply

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650 V power Schottky silicon carbide diode

文件：178.55 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

650 V power Schottky silicon carbide diode

文件：178.55 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体