Automotive 650 V, 4 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified and PPAP capable • None or negligible reverse recovery charge in application current range • Switching behaviour independent of temperature • High forward surge capability • Operating Tj from -55 °C to +175 °C • ECOPACK2 compliant component

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STMICROELECTRONICS

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Automotive 650 V, 4A power Schottky High Surge silicon carbide diode

The SiC diode, available in SMB-Flat, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery is • AEC-Q101 qualified and PPAP capable \n• Switching behaviour independent of temperature \n• Operating Tj from -55 °C to +175 °C \n• ECOPACK2 compliant component;

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TO-220-2

ST

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TO-92

ST

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TO-263

Viking光颉

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