650 V, 20 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge current capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：658.63 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Automotive 650 V, 20 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified and PPAP capable • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge current capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：777.32 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：SPSC20G065WL；Package：DO-247；650 V, 20 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge current capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：658.63 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Automotive 650 V, 20 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified and PPAP capable • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge current capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：777.32 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Automotive 650 V, 20 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified and PPAP capable • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge current capability • Operating Tj from -55 °C to 175 °C • ECOPACK2 compliant component

文件：777.32 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体