Automotive 650 V, 2 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • PPAP capable • ECOPACK2 compliant component • VRRM guaranteed from -40 to 175 °C • Power efficient product

文件：241.42 Kbytes 页数：10 Pages

STMICROELECTRONICS

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汽车用650V、2 A碳化硅功率肖特基二极管

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patter • AEC-Q101 qualified \n• No reverse recovery charge in application current range \n• Switching behavior independent of temperature \n• High forward surge capability \n• PPAP capable \n• ECOPACK2 compliant component \n• VRRM guaranteed from -40 to 175 °C \n• Power efficient product;

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650 V, 2 A high surge silicon carbide power Schottky diode

Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • ECOPACK2 compliant component • Power efficient product Description The SiC diode is an ultra-high performance power Schottky diode. It is ma

文件：236.41 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Automotive 650 V, 2 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • PPAP capable • ECOPACK2 compliant component • VRRM guaranteed from -40 to 175 °C • Power efficient product

文件：241.42 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体