1200 V, 30 A power Schottky high surge silicon carbide diode

Features • None or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating Tj from -55 °C to 175 °C • Avalanche energy rated • ECOPACK2 compliant component

文件：491.39 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

1200 V, 30 A High surge Silicon Carbide Power Schottky Diode

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, • None or negligible reverse recovery \n• Switching behavior independent of temperature \n• Robust high voltage periphery \n• Operating Tj from -55 °C to 175 °C \n• Avalanche energy rated \n• ECOPACK2 compliant component;

ST

意法半导体

1200 V, 30 A power Schottky high surge silicon carbide diode

Features • None or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating Tj from -55 °C to 175 °C • Avalanche energy rated • ECOPACK2 compliant component

文件：491.39 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Automotive 1200 V, 30 A power Schottky high surge silicon carbide diode

Features • AEC-Q101 qualified and PPAP capable • None or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating Tj from -55 °C to 175 °C • Avalanche energy rated • ECOPACK2 compliant component

文件：493.05 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Automotive 1200 V, 30 A power Schottky high surge silicon carbide diode

Features • AEC-Q101 qualified and PPAP capable • None or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating Tj from -55 °C to 175 °C • Avalanche energy rated • ECOPACK2 compliant component

文件：493.05 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Automotive 1200 V, 30 A Silicon Carbide Diode

The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, • AEC-Q101 qualified and PPAP capable \n• None or negligible reverse recovery \n• Switching behavior independent of temperature \n• Robust high voltage periphery \n• Operating Tj from -55 °C to 175 °C \n• Avalanche energy rated \n• ECOPACK2 compliant component;

ST

意法半导体