600 V power Schottky silicon carbide diode

Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ri

文件：108.2 Kbytes 页数：8 Pages

STMICROELECTRONICS

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600 V power Schottky silicon carbide diode

碳化硅（SiC）二极管是一款超高性能的功率肖特基二极管，是使用碳化硅基板制造的。宽带隙材料可用于设计600V额定电压的肖特基二极管。由于肖特基结构的关系，关断时不存在反向恢复现象，且振铃模式几乎可忽略。最小的容性关断行为受温度影响小。\n ST碳化硅（SiC）二极管能在硬开关条件下大幅提升PFC操作的性能。 • 无反向恢复，或反向恢复可忽略\n• 开关行为受温度影响小• 专为PFC升压二极管设计;

ST

意法半导体

600 V power Schottky silicon carbide diode

Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ri

文件：108.2 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

600 V power Schottky silicon carbide diode

Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ri

文件：108.2 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 600V 4A DPAK

STMICROELECTRONICS

意法半导体

Package：TO-220-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 600V 4A TO220AC

STMICROELECTRONICS

意法半导体