STGP7NB60KD

N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH??IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith

STGP7NB60KD

N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith

STGP7NB60KD

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 14A 80W TO220

STGP7NB60KDFP

N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith

STGP7NB60KDFP

N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH??IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith

STGP7NB60KFP

N-CHANNEL7A-600V-TO-220/FP/DPAK/D2PAKPowerMESH??IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“K”identifiesafamilyoptimizedforhighfrequencymotorcontrolapplicationswith

STGP7NB60M

N-CHANNEL7A-600VTO-220/DPAKPowerMESH™IGBT

nHIGHINPUTIMPEDANCE nLOWON-VOLTAGEDROP(Vcesat) nOFFLOSSESINCLUDETAILCURRENT nLOWGATECHARGE nHIGHCURRENTCAPABILITY nHIGHFREQUENCYOPERATION nCO-PACKAGEDWITHTURBOSWITCH™ ANTIPARALLELDIODE DESCRIPTION Usingthelatesthighvoltagetechnologybasedona patentedstr

STP7NB60

N-CHANNELENHANCEMENTMODEPowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STP7NB60

N-CHANNEL600V-1.0廓-7.2ATO-220/TO-220FPPowerMESH??MOSFET

STP7NB60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.