N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with

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N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH??IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with

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N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH??IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with

文件：710.92 Kbytes 页数：14 Pages

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N-CHANNEL 7A - 600V TO-220 / DPAK PowerMESH™ IGBT

n HIGH INPUT IMPEDANCE n LOW ON-VOLTAGE DROP (Vcesat) n OFF LOSSES INCLUDE TAIL CURRENT n LOW GATE CHARGE n HIGH CURRENT CAPABILITY n HIGH FREQUENCY OPERATION n CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE DESCRIPTION Using the latest high voltage technology based on a patented str

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N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

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