6 A, 600 V hyper fast IGBT with Ultrafast diode

• Low CRES / CIES ratio (no cross-conduction susceptibility)\n• Very soft ultrafast recovery antiparallel diode• Very high frequency operation;

ST

意法半导体

6 A, 600 V hyper fast IGBT

文件：645.32 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 14A 56W TO-220

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

文件：364.52 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.0A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.27 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.0A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.18 Kbytes 页数：2 Pages

ISC

无锡固电