首页 >STP6NC60FP>规格书列表

零件型号下载 订购功能描述制造商 上传企业LOGO

STP6NC60FP

N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?줚I MOSFET

DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=1.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP6NC60FP

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=6.0A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance; -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

GB6NC60H

N-channel600V-7A-D2PAKVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

GB6NC60HD

N-channel600V-7A-D2PAK/TO-220/TO-220FPVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

GD6NC60H

N-channel600V-7A-DPAKVeryfastPowerMESHTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    STP6NC60FP

  • 功能描述:

    MOSFET N-Ch 600 Volt 6 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
STMICROELEC
24+
7860
原装现货假一罚十
询价
ST
23+
TO220
5000
原装正品,假一罚十
询价
ST
23+
TO-220F
8795
询价
ST
24+
TO-220F
12500
原装现货热卖
询价
ST
16+
TO-220
10000
全新原装现货
询价
ST/进口原
17+
TO-220F
6200
询价
ST
2016+
TO-220F
6528
房间原装进口现货假一赔十
询价
STM
2016+
TO220
9000
只做原装,假一罚十,公司可开17%增值税发票!
询价
ST
02+
TO-220
30
原装现货海量库存欢迎咨询
询价
ST
22+
TO-220
3000
原装现货库存.价格优势
询价
更多STP6NC60FP供应商 更新时间2025-7-31 13:30:00