丝印：28NM60ND；Package：TO-220FP；N-channel 600 V, 0.13 廓 typ., 23 A FDmesh??II Power MOSFETs in D짼PAK, TO-220FP, TO-220 and TO-247 packages

Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

文件：1.67094 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：310.91 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal f Intrinsic fast-recovery body diode\n100% avalanche tested\nLow input capacitance and gate charge\nLow gate input resistance\nExtremely high dv/dt and avalanche capabilities;

ST

意法半导体

isc N-Channel MOSFET Transistor

文件：320.24 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.13 廓 typ., 23 A FDmesh??II Power MOSFETs in D짼PAK, TO-220FP, TO-220 and TO-247 packages

Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

文件：1.67094 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：398.12 Kbytes 页数：2 Pages

ISC

无锡固电