N沟道950 V、4.2 Ohm典型值、2 A MDmesh K5功率MOSFET，TO-220FP封装

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

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丝印：2N95K5；Package：TO-220FP；N-channel 950 V, 4.2 廓 typ., 2 A Zener-protected SuperMESH??5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

文件：1.29035 Mbytes 页数：23 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 950V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.24 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 950 V, 4.2 廓 typ., 2 A Zener-protected SuperMESH??5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

文件：1.29035 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

N-channel 950 V, 4.2 廓 typ., 2 A Zener-protected SuperMESH??5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

文件：1.29035 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体