Isc N-Channel MOSFET Transistor

文件：303.34 Kbytes 页数：3 Pages

ISC

无锡固电

N-channel 600 V, 0.17 廓, 17 A FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

文件：559.02 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

Low input capacitance and gate charge

文件：559.02 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220FP package

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal f Intrinsic fast-recovery body diode\nWorldwide best R\nDS(on)*area amongst the fast recovery diode devices\n100% avalanche tested\nLow input capacitance and gate charge\nLow gate input resistance\nExtremely high dv/dt and avalanche capabilities;

ST

意法半导体