isc N-Channel MOSFET Transistor

DESCRIPTION • Low Drain-Source On-Resistance FEATURES • Drain Current –ID=20A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 165mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable opera

文件：310.89 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making

文件：1.14259 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650-V (D-S) Super Junction MOSFET

文件：1.15827 Mbytes 页数：11 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 21A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 175mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.92 Kbytes 页数：2 Pages

ISC

无锡固电

Low input capacitance and gate charge

Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

文件：1.35849 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

丝印：26NM60N；Package：TO-220FP；N-channel 600 V, 0.135 ?? 20 A MDmesh??II Power MOSFET in TO-220FP

Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding h

文件：707.63 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V、0.135 Ohm典型值、20 A MDmesh II功率MOSFET，TO-220FP封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal f 100% avalanche tested\nLow input capacitance and gate charge\nLow gate input resistance\nExtremely high dv/dt and avalanche capabilities;

ST

意法半导体