Ultra low on-resistance

Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. Features • Ultra low on-resistance • 100 avalanche tested Applications • Switchin

文件：1.28719 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：310.99 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 100 V, 0.027 Ohm typ., 25 A STripFET F7 Power MOSFET in TO-220FP package

该器件使用ST专有的STripFET™技术的第七代设计规则，具有新的栅极结构。因而，功率MOSFET在不同封装中都能呈现最低的RDS(on)。\n • 超低导通电阻• 经过100％雪崩测试;

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 35mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.35 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 100-V (D-S) MOSFET

文件：951.68 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Ultra low on-resistance

Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. Features • Ultra low on-resistance • 100 avalanche tested Applications • Switchin

文件：1.28719 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体