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STF21NM60ND数据手册ST中文资料规格书
STF21NM60ND规格书详情
描述 Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
特性 Features
Intrinsic fast-recovery body diode
Worldwide best R
DS(on)*area amongst the fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche capabilities
技术参数
- 型号：
STF21NM60ND
- 功能描述：
MOSFET N-Ch, 600V-0.17ohms FDMesh 17A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/进口原 |
17+ |
TO-220F |
6200 |
询价 | |||
ST |
24+ |
TO220ISOFULLPACK |
8866 |
询价 | |||
ST/意法 |
22+ |
TO-220F |
14100 |
原装正品 |
询价 | ||
ST |
1645+ |
? |
7500 |
只做原装进口,假一罚十 |
询价 | ||
ST |
2447 |
TO-220F |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
STMicroelectronics |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ST/意法 |
2022+ |
TO-220FP |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
ST |
23+ |
TO220F |
6996 |
只做原装正品现货 |
询价 | ||
STMicroelectronics |
24+ |
NA |
3688 |
进口原装正品优势供应 |
询价 | ||
ST |
20+ |
TO-220F |
38560 |
原装优势主营型号-可开原型号增税票 |
询价 |
