isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 525V(Min) -RDS(on) = 0.51Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.09 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET

Description These devices are N-channel Power MOSFETs made using the SuperMESH3™ technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on resistance, superio

文件：1.16073 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 525V(Min) -RDS(on) = 0.51Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.06 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

文件：1.03514 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET

Description These devices are N-channel Power MOSFETs made using the SuperMESH3™ technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on resistance, superio

文件：1.16073 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体