isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 180mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.21 Kbytes 页数：2 Pages

ISC

无锡固电

Extremely low gate charge

文件：1.2408 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N沟道650 V、0.15 Ohm典型值、20 A MDmesh M2功率MOSFET，TO-220FP封装

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Extremely low gate charge

文件：660.95 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：1.2408 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.84 Kbytes 页数：2 Pages

ISC

无锡固电