首页 >STF26NM60ND>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
STF26NM60ND | Low input capacitance and gate charge Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
N-channel600V,0.160廓,19APowerFLAT??8x8HVultralowgatechargeMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=21A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=175mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Lowinputcapacitanceandgatecharge Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-Channel650-V(D-S)SuperJunctionMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-channel600V,0.135??20AMDmesh??IIPowerMOSFETinTO-220FP Description ThisseriesofdevicesimplementssecondgenerationMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemandingh | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel600V,0.135,20AMDmeshIIPowerMOSFETinPAKFPpackage ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationof MDmesh™technology. ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel600V,0.160廓,19APowerFLAT??8x8HVultralowgatechargeMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel600V,0.135廓typ.,20AMDmesh??IIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Lowinputcapacitanceandgatecharge Description TheseFDmesh™IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh™technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL600V-0.125ohm-26ATO-247Zener-ProtectedMDmeshTMPowerMOSFET DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 |
详细参数
- 型号:
STF26NM60ND
- 制造商:
STMicroelectronics
- 功能描述:
MOSFET N-CH 600V 21A TO220FP
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMICRO |
2305+ |
原厂封装 |
8900 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
询价 | ||
ST(意法半导体) |
23+ |
TO-220F |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
STMicroelectronics |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
ST |
23+ |
TO-TO-220F |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
STM |
1809+ |
TO-220 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
ST/意法 |
23+ |
TO-220F |
10000 |
公司只做原装正品 |
询价 | ||
22+ |
NA |
411 |
加我QQ或微信咨询更多详细信息, |
询价 | |||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST/意法 |
2022+ |
TO-220F |
79999 |
询价 | |||
ST/意法 |
21+ |
TO-220FP |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 |
相关规格书
更多- STF28N60M2
- STF28NM50N
- STF2HNK60Z
- STF2N62K3
- STF2N95K5
- STF30N10F7
- STF31N65M5
- STF32NM50N
- STF33N65M2
- STF34NM60N
- STF35N65M5
- STF3LN62K3
- STF3N80K5
- STF3NK80Z
- STF40NF06
- STF42N65M5
- STF45N65M5
- STF4N62K3
- STF57N65M5
- STF5N52U
- STF5N62K3
- STF5N95K5
- STF6N52K3
- STF6N62K3
- STF6N65M2
- STF6N95K5
- STF715
- STF7N52DK3
- STF7N60M2
- STF7N80K5
- STF7NM50N
- STF7NM80
- STF817A
- STF8N65M5
- STF8NK100Z
- STF9N60M2
- STF9NK90Z
- STFE050-10N
- STFE15-5MNAT
- STFE18-5MNAT
- STFE200-24L
- STFE9-5MNAT
- STFI10N65K3
- STFI11N65M2
- STFI13N80K5
相关库存
更多- STF28N65M2
- STF28NM60ND
- STF2LN60K3
- STF2N80K5
- STF2NK60Z
- STF30N65M5
- STF32N65M5
- STF33N60M2
- STF34N65M5
- STF34NM60ND
- STF38N65M5
- STF3N62K3
- STF3NK100Z
- STF40N60M2
- STF40NF20
- STF45N10F7
- STF4N52K3
- STF4N80K5
- STF5N52K3
- STF5N60M2
- STF5N95K3
- STF5NK100Z
- STF6N60M2
- STF6N65K3
- STF6N80K5
- STF701-LF-T7
- STF7N105K5
- STF7N52K3
- STF7N65M2
- STF7N95K3
- STF7NM60N
- STF80N10F7
- STF826
- STF8N80K5
- STF8NM50N
- STF9N65M2
- STF9NM60N
- STFE13-5MNAT
- STFE16-5MNAT
- STFE200-10N
- STFE22-5MNAT
- STFI10N62K3
- STFI10NK60Z
- STFI130N10F3
- STFI13N95K3