isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.16Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.94 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 200V - 0.15廓 - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY??Power MOSFET

Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. ■ Extremely high dv/dt capability ■ Gate charge minimized ■

文件：535.64 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：19NF20；Package：TO-220FP；N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY™ Power MOSFETs in D2PAK, DPAK, TO‑220FP and TO-220 packages

Features • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance Applications • Switching applications Description These Power MOSFETs are designed using STMicroelectronics' consolidated striplayout- based MESH OVERLAY™ process. The result is a

文件：809.51 Kbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体

N-Channel MOSFET uses advanced trench technology

文件：1.01258 Mbytes 页数：5 Pages

DOINGTER

杜因特

N沟道200 V、0.11 Ohm典型值、11 A MESH OVERLAY功率MOSFET，TO-220FP封装

These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. • Extremely high dv/dt capability \n• Gate charge minimized \n• Very low intrinsic capacitance;

ST

意法半导体