丝印：19NF20；Package：D2PAK；N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY™ Power MOSFETs in D2PAK, DPAK, TO‑220FP and TO-220 packages

Features • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance Applications • Switching applications Description These Power MOSFETs are designed using STMicroelectronics' consolidated striplayout- based MESH OVERLAY™ process. The result is a

文件：809.51 Kbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体

丝印：19NF20；Package：DPAK；N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY™ Power MOSFETs in D2PAK, DPAK, TO‑220FP and TO-220 packages

Features • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance Applications • Switching applications Description These Power MOSFETs are designed using STMicroelectronics' consolidated striplayout- based MESH OVERLAY™ process. The result is a

文件：809.51 Kbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体

丝印：19NF20；Package：TO-220FP；N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY™ Power MOSFETs in D2PAK, DPAK, TO‑220FP and TO-220 packages

Features • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance Applications • Switching applications Description These Power MOSFETs are designed using STMicroelectronics' consolidated striplayout- based MESH OVERLAY™ process. The result is a

文件：809.51 Kbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体

丝印：19NF20；Package：TO-220；N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY™ Power MOSFETs in D2PAK, DPAK, TO‑220FP and TO-220 packages

Features • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance Applications • Switching applications Description These Power MOSFETs are designed using STMicroelectronics' consolidated striplayout- based MESH OVERLAY™ process. The result is a

文件：809.51 Kbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体