首页 >STF15NM60ND>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
STF15NM60ND | N-channel 600 V - 0.27 廓 - 14 A - FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247 Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body d 文件:600.45 Kbytes 页数:19 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
STF15NM60ND | isc N-Channel MOSFET Transistor 文件:311.08 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
STF15NM60ND | N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-220FP package The FDmesh II series belongs to the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly The worldwide best R\nDS(on)* area amongst the fast recovery diode devices\nLow input capacitance and gate charge\n100% avalanche tested\nExtremely high dv/dt and avalanche capabilities\nLow gate input resistance; | ST 意法半导体 | ST | |
N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema 文件:607.96 Kbytes 页数:18 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema 文件:607.96 Kbytes 页数:18 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-channel 600 V - 0.27 廓 - 14 A - FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247 Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body d 文件:600.45 Kbytes 页数:19 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS |
详细参数
- 型号:
STF15NM60ND
- 功能描述:
MOSFET N-Ch, 600V-0.27ohms FDMesh 14A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
TO-220F |
32360 |
ST/意法全新特价STF15NM60ND即刻询购立享优惠#长期有货 |
询价 | ||
ST/意法 |
17+ |
TO-220FP |
31518 |
原装正品 可含税交易 |
询价 | ||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
ST |
24+ |
TO220F |
7850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
STMICRO |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
ST/进口原 |
17+ |
TO-220F |
6200 |
询价 | |||
ST |
24+ |
TO-220F |
5000 |
只做原装公司现货 |
询价 | ||
STMicroelectronics |
24+ |
NA |
3605 |
进口原装正品优势供应 |
询价 | ||
ST |
23+ |
TO-220F |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ST |
18+ |
TO-220F |
41200 |
原装正品,现货特价 |
询价 |
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