isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) -RDS(on) = 125mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-channel 200V - 0.10廓 -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters. Features ■ Excep

文件：505.84 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 200 V, 0.10 廓, 18 A DPAK, TO-220, TO-220FP low gate charge STripFET??Power MOSFET

文件：915.56 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-Channel 200 V (D-S) MOSFET

文件：1.03001 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N沟道200 V、0.10 Ohm典型值、18 A StripFET功率MOSFET，TO-220FP封装

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters. • Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

ST

意法半导体