isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.235Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.16 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 250V - 0.195廓 - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telec

文件：462.68 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N沟道250 V、0.195 Ohm、14 A STripFET II功率MOSFET，TO-220FP封装

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu • Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.235Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.91 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 250V - 0.195廓 - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telec

文件：462.68 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体