isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.299Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.35 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 900 V, 0.25 廓 typ., 18.5 A Zener-protected SuperMESH??5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages

文件：998.12 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N沟道900 V、0.25 Ohm典型值、18.5 A MDmesh K5功率MOSFET，TO-220FP封装

These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for app • TO-220 worldwide best RDS(on) \n• Worldwide best FOM (figure of merit) \n• Ultra low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 900 V, 0.25 廓 typ., 18.5 A Zener-protected SuperMESH??5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages

文件：998.12 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.299Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.46 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=75A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 34mΩ(Max)@VGS= 10V ·100 avalanche tested DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.

文件：340.97 Kbytes 页数：2 Pages

ISC

无锡固电