isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching applicati

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ISC

无锡固电

Low gate input resistance

Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency con

文件：1.07185 Mbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V、0.255 Ohm典型值、13 A MDmesh M2功率MOSFET，TO-220FP封装

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220FP narrow leads package

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore sui • Extremely low gate charge\n• Lower RDS(on)x area vs previous generation\n• Low gate input resistance• 100% avalanche tested\n• Zener-protected;

ST

意法半导体