N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.10552 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel Mosfet Transistor

文件：294.53 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道650 V、0.230 Ohm典型值、12 A MDmesh M5功率MOSFET，TO-220FP封装

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-ba • Worldwide best RDS(on) \n• Higher VDSSrating \n• High dv/dt capability \n• Excellent switching performance \n• Easy to drive \n• 100% avalanche tested;

ST

意法半导体

isc N-Channel Mosfet Transistor

• FEATURES • Drain Current ID= 12A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：341.96 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.10552 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.270 ohm, 12 A PowerFLAT 8x8 HV

文件：934.88 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体