丝印：21N65M5；Package：TO-220FP；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

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STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

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ISC

无锡固电

N沟道650 V、0.150 Ohm典型值、17 A MDmesh M5功率MOSFET，TO-220FP封装

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics' well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-ba • Worldwide best RDS(on) * area \n• Higher VDSS rating \n• High dv/dt capability \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

N-channel 650 V, 0.150 Ohm typ., 17 A MDmesh(TM) V Power MOSFET in TO-220FP narrow leads package

This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-bas • Worldwide best RDS(on) * area\n• High dv/dt capability• Excellent switching performance\n• 100% avalanche tested;

ST

意法半导体