STB21N65M5

Marking：21N65M5；Package：D2PAK；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STF21N65M5

Marking：21N65M5；Package：TO-220FP；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STI21N65M5

Marking：21N65M5；Package：I2PAK；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STP21N65M5

Marking：21N65M5；Package：TO-220；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STW21N65M5

Marking：21N65M5；Package：TO-247；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda