丝印：21N65M5；Package：D2PAK；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.43958 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：21N65M5；Package：TO-220FP；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.43958 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：21N65M5；Package：I2PAK；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.43958 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：21N65M5；Package：TO-220；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.43958 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：21N65M5；Package：TO-247；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.43958 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.175 廓, 17 A PowerFLAT??(8x8) HV ultra low gate charge MDmesh??V Power MOSFET

文件：894.41 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体