21P

型号：TPM2021NEC3；Package：SOT323；N-Channel Enhancement Mode MOSFET

Features VDS=20V RDS(ON)=300mQ(typ.)@VGS=2.5V RDS(ON)=250mQ(typ.)@VGS=4.5V ESDProtectedupto2KV

21P

型号：WNM2021；Package：SOT323；N-Channel Enhancement Mode MOSFET

Features ●SurfaceMountPackage ●N-ChannelSwitchwithLowRos(on) ●OperatedatLowLogicLevelGateDrive ●ESDProtected

21P

型号：DMG1012UW；Package：SOT323；N-Channel Enhancement Mode MOSFET

21P

型号：DMN2004WK；Package：SOT323；N-Channel Enhancement Mode MOSFET

21P

型号：PCJ3134KW；Package：SOT323；N-Channel Enhancement Mode MOSFET

21P

型号：XP221P0501TR-G；Package：SOT-23；P-channel MOSFET -20V, -0.5A

21P6LLF6

型号：STF21P6LLF6；Package：TO-220FP；P-channel -60 V, 25.5 mΩ typ., -21 A STripFET™ F6 Power MOSFET in a TO-220FP package

Features Verylowon-resistance Verylowgatecharge Highavalancheruggedness Lowgatedrivepowerloss Applications Switchingapplications Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET™F6technology, withanewtrenchgatestructure.Th

21PF

型号：TPS7A0333PDBVR；Package：SOT-23；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1Features •Ultra-lowIQ:200nA(typ),evenindropout •ShutdownIQ:3nA(typ) •Excellenttransientresponse(1mAto50mA) –

21PF

型号：TPS7A0333PDBVR；Package：SOT-23；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1Features •Ultra-lowIQ:200nA(typ),evenindropout •ShutdownIQ:3nA(typ) •Excellenttransientresponse(1mAto50mA) –

21PF

型号：TPS7A0333PDBVR；Package：SOT-23；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1Features •Ultra-lowIQ:200nA(typ),evenindropout •ShutdownIQ:3nA(typ) •Excellenttransientresponse(1mAto50mA) –