丝印：21P6LLF6；Package：TO-220FP；P-channel -60 V, 25.5 mΩ typ., -21 A STripFET™ F6 Power MOSFET in a TO-220FP package

Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. Th

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STMICROELECTRONICS

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