丝印：21P；Package：SOT323；N-Channel Enhancement Mode MOSFET

Features VDS = 20V RDS(ON) =300mQ (typ.) @ VGS= 2.5V RDS(ON) =250mQ (typ.) @ VGS= 4.5V ESD Protected up to 2KV

文件：2.5436 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：21P；Package：SOT323；N-Channel Enhancement Mode MOSFET

Features ● Surface Mount Package ● N-Channel Switch with Low Ros(on) ● Operated at Low Logic Level Gate Drive ● ESD Protected

文件：10.95511 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：21P；Package：SOT323；N-Channel Enhancement Mode MOSFET

文件：2.64683 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：21P；Package：SOT323；N-Channel Enhancement Mode MOSFET

文件：2.64703 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：21P；Package：SOT323；N-Channel Enhancement Mode MOSFET

文件：2.65517 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：21P；Package：SOT-23；P-channel MOSFET -20V, -0.5A

文件：400.69 Kbytes 页数：6 Pages

TOREX

特瑞仕

丝印：21P6LLF6；Package：TO-220FP；P-channel -60 V, 25.5 mΩ typ., -21 A STripFET™ F6 Power MOSFET in a TO-220FP package

Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. Th

文件：632.7 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：21PF；Package：SOT-23；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1 Features • Ultra-low IQ: 200 nA (typ), even in dropout • Shutdown IQ: 3 nA (typ) • Excellent transient response (1 mA to 50 mA) –

文件：3.2169 Mbytes 页数：50 Pages

TI

德州仪器

丝印：21PF；Package：SOT-23；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1 Features • Ultra-low IQ: 200 nA (typ), even in dropout • Shutdown IQ: 3 nA (typ) • Excellent transient response (1 mA to 50 mA) –

文件：3.21839 Mbytes 页数：50 Pages

TI

德州仪器

丝印：21PF；Package：SOT-23；TPS7A03 Nanopower IQ, 200-nA, 200-mA, Low-Dropout Voltage Regulator With Fast Transient Response

1 Features • Ultra-low IQ: 200 nA (typ), even in dropout • Shutdown IQ: 3 nA (typ) • Excellent transient response (1 mA to 50 mA) –

文件：3.21861 Mbytes 页数：50 Pages

TI

德州仪器