isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 950V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·motor drive,

文件：323.61 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS= 950V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.55 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 950 V, 0.68 Ohm typ., 10 A Zener-protected SuperMESH3

文件：861.98 Kbytes 页数：19 Pages

STMICROELECTRONICS

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N沟道950 V、0.68 Ohm典型值、10 A有齐纳管保护的SuperMESH3(TM) 功率MOSFET，TO-220FP封装

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitab • Gate charge minimized \n• Extremely large avalanche performance \n• 100% avalanche tested \n• Very low intrinsic capacitance \n• Zener-protected;

ST

意法半导体