N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ■ SURFACE-MOUNTING

文件：172.35 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

ST

意法半导体

3A, 250V N-CHANNEL POWER MOSFET

文件：150.55 Kbytes 页数：3 Pages

UTC

友顺

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

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FAIRCHILD

仙童半导体

TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM

文件：253.49 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

文件：208.49 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉